ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse...

Bare Die SiC from ROHM Chosen by Apex Microtechnology for Newest Line of Power Modules Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide...

ROHM’s SiC SBDs Chosen by Murata Power Solutions for Data Center PSUs Santa Clara, CA and Kyoto, Japan, March 07, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky...

Microchip Unveils Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices Enabling New Levels of Efficiency and Reliability CHANDLER, Ariz., March 21, 2022 (GLOBE NEWSWIRE) -- System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy...