-- Surface Coil Switching Breakthrough
Virtually Eliminates Artifact Interference
-- New Device Expected to Set Industry Standard
-- Recommended for Market Leader's Systems
IRVINE, Calif., Nov. 2, 2004 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high reliability discrete semiconductors and advanced analog and mixed signal integrated circuits, announced today that it has developed a new ultra low-magnetic PIN diode that virtually eliminates artifact interference in the surface coil switching of MRI systems.
Designated the UM9995(tm), Microsemi's new device has been recommended by the market leader of MRI systems for surface coil construction in its 3T and higher systems.
The recommendation follows excellent performance testing of the new Microsemi device in 3T surface coils designed by the leading MRI systems manufacturer. The "T" designation represents "Telsa," a measurement enhancing MRI clarity. The industry is moving to higher clarity 7T systems.
Artifact interference is created by a "glow" or "halo" surrounding a diode's structure. The greater the artifact, the more difficult it becomes to accurately measure the location of objects, such as tumors, being scanned by the imager's RF magnetic field.
In the customer tests that compared Microsemi's UM9995 diode with diodes of identical physical and electrical specifications, the UM9995 reduced artifact halo interference from about 25 millimeters in diameter to just over 5 millimeters--so close to the physical dimension of the device that it can be considered non-magnetic, a breakthrough.
"Microsemi has a solid reputation for high reliability semiconductors used in medical and aerospace applications. The MRI market continues to expand at greater than 18% and Microsemi intends to continue to focus innovative products on this growing market," said James J. Peterson, Microsemi President and CEO. "This latest breakthrough promises to set the standard for high performance MRI surface coils," he said.
The UM9995's superior performance results from a combination of special hermetic packaging materials, low inductance Microsemi PIN diode silicon chips, and a proprietary construction process that uses full-faced metallurgical bonds to both surfaces of the chip. The device provides high power handling capability with a low bias current requirement.
Complete technical information is available on the Microsemi web site, www.Microsemi.com. Samples can be requested through this site, from Microsemi sales representatives, or from Microsemi Microwave Products at 978-442-5600.
About Microsemi
Microsemi is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits and high reliability discrete semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, military/aerospace and satellite, notebook computers and monitors, automotive and mobile connectivity applications.
More information may be obtained by contacting the company directly or by visiting its web site at http://www.microsemi.com.
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Investor Inquiries: David R. Sonksen, Microsemi Corporation, Irvine, CA (949) 221-7101.
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