IRVINE, Calif., June 8, 2006 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors, is displaying its latest microwave and RF power products and wireless LAN power amplifiers at the 2006 IEEE MTT-S International Microwave Symposium and Exhibition in San Francisco's Moscone Center, June 13-15.
-- Lowest-Distortion PIN Diodes for MRI Systems -- 802.11a/b/g Wireless LAN Power Amplifiers -- Latest High Power, High Performance Radar/Avionics Transistors
In addition to its high voltage PIN switching diodes for microwave and RF applications, Microsemi will exhibit its new RF power products line--added from the recent acquisition of Advanced Power Technology--and its latest HBT InGaP power amplifiers for IEEE 802.11a/b/g wireless LAN applications. A next-generation Wide Band Gap Silicon Carbide demonstration will be featured.
Visitors to the Microsemi exhibit will have an opportunity to learn about the company's latest InGaP HBT power amplifiers, including the LX5506M and LX5530 for broadband, high-gain power amplification in 802.11a applications and the LX5511 and LX5513 for high gain 802.11b/g applications.
Attendees will learn about Microsemi's breakthrough UMX5601 PIN diode for "In Bore" surface coil magnetic resonance applications. This new device provides the industry's lowest magnetic distortion, for enhanced accuracy in MRI diagnosis.
New to Microsemi at this year's MTT-S is the power transistors line from its RF Power Products division, formerly Advanced Power Technology. Included in this exhibit are new pulsed power transistors for avionics and communications applications and high power transistors for S-Band, L-Band, P-Band and UHF-Band radar applications.
Microsemi's display of RF/microwave diode products highlights advanced packaging including monolithic microwave surface mount (MMSM), micro-paks, Powermite, and EPSM enhanced performance packages.
Patented MMSM technology integrates packaging and discrete microwave semiconductors at the wafer fabrication level, enabling automatic assembly in applications ranging from 2.4 GHz PCS communications to solid state microwave switches and attenuators. It provides the widest bandwidth of any commercial surface mount devices and is able to handle up to 10 watts incident RF power.
"The MTT-S Symposium has always been a significant place for us to display our strong RF/microwave capabilities," said John A. Caruso, Vice President and General Manager of Microsemi's Microwave Product division in Lowell, Massachusetts. "This year we are especially excited by the addition of our new RF Power Products division to the Microsemi exhibit," he added.
About Microsemi Corporation
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance, reliability and battery optimization, reducing size or protecting circuits. The principal markets the company serves include implantable medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its web site at http://www.microsemi.com.
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Investor Inquiries: David R. Sonksen, Microsemi Corporation, Irvine, CA (949) 221-7101.