IRVINE, Calif., Sept. 12, 2006 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has launched the first 15 devices in their newest generation of POWER MOS 8(tm) products.
These new MOS 8 MOSFET and FREDFET devices are designed for high power, high performance switch mode applications including power factor correction, server and telecom power systems, solar inverters, arc welding, plasma cutting, battery chargers, medical, semiconductor capital equipment and induction heating.
Key Performance Features
-- Improved oscillation immunity and reduced EMI -- Low R(DSon) -- Low gate charge -- Low switching losses -- Avalanche energy rated -- Lower thermal resistance -- FREDFETs available with fast recovery body diodes
Microsemi engineers employed advanced design techniques to optimize capacitances and gate resistance. The result is a family of devices with improved oscillation immunity, lower peak slew rates, reduced EMI and high dv/dt ruggedness capability. These features combine to simplify filtering and paralleling of multiple devices in high power applications.
In addition, advanced manufacturing processes for the new MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses.
All MOS 8 devices are 100 percent tested for avalanche energy capability and are offered only in RoHS compliant packages.
"Our new POWER MOS 8 family utilizes advanced technologies and manufacturing processes to deliver what our customers have asked for in our new generation of MOSFETs and FREDFETs," said Russell Crecraft, Vice President and General Manager of Microsemi's Power Products Group in Bend, Oregon. "Our MOS 8 family will offer the industry's broadest range of high voltage, high power, high performance MOSFETs, FREDFETs and PT IGBTs," he said.
MOS 8 FREDFETs have all of the features and advantages of MOS 8 MOSFETs, with the added benefit of a faster body diode recovery speed greater than 250ns. These devices provide superior ruggedness and reliability in applications where the body diode carries forward current, such as popular zero voltage switching (ZVS) bridge topologies.
First to be released in the POWER MOS 8 family are ten MOSFET and five FREDFET devices with power ratings from 19 to 75 amps and voltage specifications from 500 to 1200 volts. Additional power/voltage combinations will be introduced throughout the balance of 2006 and into early 2007.
The first Ultrafast Recovery FREDFETs, rated at 500 and 600 volts, will feature a 150ns recovery time and are scheduled for release in the fourth quarter of 2006. MOS 8 IGBTs with 600 & 900V ratings will follow in early 2007.
The first POWER MOS 8 devices:
Volts Rds Id Part Number Device Type Package Style
(on) (Amps)
500 0.14 42 APT42F50B FREDFET TO-247, D3
0.10 56 APT56M50L MOSFET TO-264, T-MAX(r)
0.10 38 APT38M50J MOSFET SOT-227
0.075 51 APT51M50J MOSFET SOT-227
0.075 75 APT75M50B2 MOSFET TO-264, T-MAX(r)
600 0.21 34 APT34F60B FREDFET TO-247, D3
0.21 34 APT34M60B MOSFET TO-247, D3
0.16 43 APT43M60L MOSFET TO-264, T-MAX(r)
0.16 30 APT30M60J MOSFET SOT-227
1000 0.46 29 APT29F100L FREDFET TO-264, T-MAX(r)
0.46 19 APT19F100J FREDFET SOT-227
0.40 31 APT31M100L MOSFET TO-264, T-MAX(r)
0.40 21 APT21M100J MOSFET ISOTOP
1200 0.80 22 APT22F12B2 FREDFET TO-264, T-MAX(r)
0.68 24 APT24M120L MOSFET TO-264, T-MAX(r)
MOS 8 technology utilizes a simplified manufacturing process that significantly lowers costs compared to previous Microsemi power MOSFET products. The 1K pricing for part number APT56M50B2 is $7.34. Contact factory direct for additional pricing. All the announced POWER MOS 8 devices are available for immediate sampling. Technical information is available on the Microsemi web site, http://www.microsemi.com. Samples can be ordered through this site, or from Microsemi sales representatives and authorized distributors.
About Microsemi Corporation
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance, reliability and battery optimization, reducing size or protecting circuits. The principal markets the company serves include implantable medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its web site at http://www.microsemi.com.
The Microsemi Corporation logo is available at http://www.primezone.com/newsroom/prs/?pkgid=1233
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Investor Inquiries: David R. Sonksen, Microsemi Corporation, Irvine, CA (949) 221-7101.