IRVINE, Calif., Aug. 23, 2007 (PRIME NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has announced a new series of high speed IGBT transistors developed for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power supply applications.
Designated the Thunderbolt HS(tm) IGBT Series, the new IGBTs are Microsemi's next generation of NPT technology targeting high switching frequency applications. These devices exhibit higher saturation voltage and significantly lower turn-off energy losses than previous generations. Low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but at lower cost. Thunderbolt HS(tm) IGBTs are available as single devices or packaged with a DQ Series fast, soft recovery diode.
Key Features
* High speed switching with reduced E(off) loss * Newest generation of NPT technology * Tight parameter distribution and easy paralleling * 10 micro second short circuit rating * Available with DQ Series Combi diode * Low EMI * High noise immunity * High reliability
An extremely tight parameter distribution combined with a positive temperature coefficient make it easy to parallel Thunderbolt HS(tm) IGBTs. Controlled slew rates result in high noise and oscillation immunity and low EMI. The short circuit duration rating of 10 microseconds makes these IGBTs suitable for inverter and motor drive applications. Reliability is further enhanced by avalanche energy ruggedness.
The exceptional fast recovery performance of the anti-parallel DQ diode in Combi versions make the Thunderbolt HS(tm) series well suited for hard switching applications. The Combi diode performance combined with fast turn-off of the IGBT combine to yield superior reliability in ZVS applications. The Thunderbolt HS(tm) Series is an ideal solution for medium to high power applications requiring minimum system cost and high performance.
Rated at 600 volts and 2.8 volts typical V(CE(ON) the new high speed IGBTs are available in 20 amp, 30 amp, and 50 amp versions in TO-220, TO-247, or D(3) packages. Combi versions include a DQ series fast recovery anti-parallel diode.
The single IGBT Thunderbolt devices: 20 amp--APT20GS60KRG; 30 amp--APT30GS60KRG; 50 amp--APT50GS60BRG.
Combi IGBT Thunderbolt and DQ fast recovery diode devices: 20 amp--APT20GS60BRDQ1G; 30 amp--APT30GS60BRDQ2G; 50 amp--APT50GS60BRDQ2G.
Thunderbolt and Combi samples are available immediately. Prices range from $1.43 to $3.18 for single IGBTs in quantities of 1K pieces, and from $2.18 to $3.85 for combi's with DQ diodes. Technical datasheets are available on the Microsemi website: www.microsemi.com.
About Microsemi Corporation
Microsemi, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The Company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive, and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, optimizing battery performance, reducing size or protecting circuits. The principal markets the company serves include defense, commercial air, satellite, medical, notebook computers, LCD TVs, mobile, and connectivity applications. More information may be obtained by contacting the company directly or by visiting its web site at http://www.microsemi.com.
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