GREENSBORO, N.C., May 18, 2010 (GLOBE NEWSWIRE) -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the Company will showcase its broad portfolio of industry-leading RF communications components at the IEEE International Microwave Symposium (IMS), to be held May 25-27, 2010, in Anaheim, California. During the conference, RFMD will host in-booth demonstrations of the Company's high-power gallium nitride (GaN) products as well as the Company's smart energy/advanced metering infrastructure (AMI) Zigbee® products.
RFMD's GaN in-booth demonstration will feature the RFG1M09180, a high power, high efficiency GaN Doherty amplifier for 3G/4G cellular base stations. The RFG1M09180 achieves 180W peak power at 50V operation while maintaining over 70% peak efficiency, and a single RFG1M09180 amplifier can cover a frequency range of 700MHz to 1000MHz. RFMD's smart energy/AMI demonstration will feature RFMD's Zigbee® products developed in collaboration with Ember Corporation for the RF6525/EM357 reference design.
RFMD's broad portfolio of RF components serves more than 20 end markets and a very broad, diverse global customer base. RFMD launched more than 350 new and derivative products in support of these markets in the past fiscal year. RFMD's employees presenting papers, chairing sessions and hosting proceedings at the IEEE International Microwave Symposium will represent the Company's Defense and Power, Broadband Components, Wireless Connectivity, Wireless Products, and GaN Foundry Services business units. RFMD will be located at the IEEE International Microwave Symposium (IMS), May 25-27, 2010, in the Anaheim Convention Center, in Booth 810 in the Exhibition Hall.
About RFMD
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
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This press release includes "forward-looking statements" within the meaning of the safe harbor provisions of the Private Securities Litigation Reform Act of 1995. These forward-looking statements include, but are not limited to, statements about our plans, objectives, representations and contentions and are not historical facts and typically are identified by use of terms such as "may," "will," "should," "could," "expect," "plan," "anticipate," "believe," "estimate," "predict," "potential," "continue" and similar words, although some forward-looking statements are expressed differently. You should be aware that the forward-looking statements included herein represent management's current judgment and expectations, but our actual results, events and performance could differ materially from those expressed or implied by forward-looking statements. We do not intend to update any of these forward-looking statements or publicly announce the results of any revisions to these forward-looking statements, other than as is required under the federal securities laws. RF Micro Devices' business is subject to numerous risks and uncertainties, including risks associated with the impact of global macroeconomic and credit conditions on our business and the business of our suppliers and customers, variability in operating results, the rate of growth and development of wireless markets, our reliance on inclusion in third party reference designs for a portion of our revenue, our ability to manage channel partner and customer relationships, risks associated with the operation of our wafer fabrication, molecular beam epitaxy, assembly and test and tape and reel facilities, our ability to complete acquisitions and integrate acquired companies, including the risk that we may not realize expected synergies from our business combinations, our ability to attract and retain skilled personnel and develop leaders, variability in production yields, raw material costs and availability, our ability to reduce costs and improve margins in response to declining average selling prices, our ability to bring new products to market, our ability to adjust production capacity in a timely fashion in response to changes in demand for our products, dependence on a limited number of customers, dependence on gallium arsenide (GaAs) for the majority of our products, and dependence on third parties. These and other risks and uncertainties, which are described in more detail in RF Micro Devices' most recent Annual Report on Form 10-K and other reports and statements filed with the Securities and Exchange Commission, could cause actual results and developments to be materially different from those expressed or implied by any of these forward-looking statements.
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