IRVINE, Calif., June 17, 2010 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced today that the Defense Supply Center Columbus (DSCC) has granted space-level qualification on the balance of Microsemi's first family of radiation-hardened power MOSFET devices. These popular N-Channel power MOSFETs now join Microsemi's already-qualified P-Channel power MOSFETs to complete the family of radiation hardened devices originally targeted in this development program.
Microsemi is releasing 20 new radiation-hardened hermetic power MOSFET devices in three through-hole and two surface-mount packages. These devices are radiation hardened to meet the total dose requirements of MIL-PRF-19500 up to 300,000 RAD(Si).
"Our customers now have what they have been asking for all along: a new source for radiation hardened MOSFETs," said Doug Milne, Vice President and General Manager of Microsemi's Lawrence, Massachusetts facility. He added; "The introduction of this new product family shows our commitment to the space industry and in Microsemi remaining the number one power discrete supplier in the high reliability market. Work is already under way on our next generation of radiation hardened products."
All devices are constructed to meet the demanding requirements of space applications. Radiation-hardened MOSFETs are primarily used in power supplies, power converters, motor controls, and other power switching applications. These products use the latest wafer fabrication technologies developed in Microsemi's Garden Grove, CA facility.
Features include:
- Total dose hardened to 300K RAD(Si)
- 100V & 200V N-Channel devices
- 100V P-Channel devices
- Three through-hole hermetic package outlines
- Two surface-mount hermetic package configurations
- Fast switching, low RDS(ON) characteristics
- Single event hardened
Microsemi's full line of space-level qualified radiation hardened power MOSFETs:
| Part Number | BVDSS | RDS(ON) | I(D) | CH | Package | MIL-PRF-19500 | |
| JANSR2N7261 | 100V | 0.18 ohm | 8A | N | TO-205AF(TO-39) | /601 | |
| JANSF2N7261 | 100V | 0.18 ohm | 8A | N | TO-205AF(TO-39) | /601 | |
| JANSR2N7262 | 200V | 0.18 ohm | 5.5A | N | TO-205AF(TO-39) | /601 | |
| JANSF2N7262 | 200V | 0.18 ohm | 5.5A | N | TO-205AF(TO-39) | /601 | |
| JANSR2N7261U | 100V | 0.18 ohm | 8A | N | 18 Pin LCC | /601 | |
| JANSF2N7261U | 100V | 0.18 ohm | 8A | N | 18 Pin LCC | /601 | |
| JANSR2N7262U | 200V | 0.18 ohm | 5.5A | N | 18 Pin LCC | /601 | |
| JANSF2N7262U | 200V | 0.18 ohm | 5.5A | N | 18 Pin LCC | /601 | |
| JANSR2N7268 | 100V | 0.065 ohm | 34A | N | TO-254AA | /603 | |
| JANSF2N7268 | 100V | 0.065 ohm | 34A | N | TO-254AA | /603 | |
| JANSR2N7269 | 200V | 0.1 ohm | 26A | N | TO-254AA | /603 | |
| JANSF2N7269 | 200V | 0.1 ohm | 26A | N | TO-254AA | /603 | |
| JANSR2N7268U | 100V | 0.065 ohm | 34A | N | TO-267AB(SMD1) | /603 | |
| JANSF2N7268U | 100V | 0.065 ohm | 34A | N | TO-267AB(SMD1) | /603 | |
| JANSR2N7269U | 200V | 0.1 ohm | 26A | N | TO-267AB(SMD1) | /603 | |
| JANSF2N7269U | 200V | 0.1 ohm | 26A | N | TO-267AB(SMD1) | /603 | |
| JANSR2N7380 | 100V | 0.18 ohm | 14.4A | N | TO-257AA | /614 | |
| JANSF2N7380 | 100V | 0.18 ohm | 14.4A | N | TO-257AA | /614 | |
| JANSR2N7381 | 200V | 0.4 ohm | 9.4A | N | TO-257AA | /614 | |
| JANSF2N7381 | 200V | 0.4 ohm | 9.4A | N | TO-257AA | /614 | |
| JANSM2N7382 | -100V | 0.3 ohm | -11A | P | T0-257AA | /615 | |
| JANSD2N7382 | -100V | 0.3 ohm | -11A | P | T0-257AA | /615 | |
| JANSR2N7382 | -100V | 0.3 ohm | -11A | P | T0-257AA | /615 | |
| JANSF2N7382 | -100V | 0.3 ohm | -11A | P | T0-257AA | /615 | |
| JANSF2N7389 | -100V | 0.30 ohm | -6.5A | P | T0-205AF(T0-39) | /630 | |
| JANSR2N7389 | -100V | 0.30 ohm | -6.5A | P | T0-205AF(T0-39) | /630 | |
| JANSF2N7389U | -100V | 0.30 ohm | -6.5A | P | 18 Pin LCC | /630 | |
| JANSR2N7389U | -100V | 0.30 ohm | -6.5A | P | 18 Pin LCC | /630 |
All Microsemi radiation hardened MOSFETs are offered up to Radiation Hardness Assurance (RHA) Level F (Total ionizing dose 300K RAD(Si). All standard lower total dose levels are also available. A full description of these devices and technical data sheets are available on the Microsemi website: www.microsemi.com.
About Microsemi
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits, high reliability semiconductors and RF subsystems. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at www.globenewswire.com/newsroom/ctr%3Fd=181116%26amp;l=4%26amp;u=http%253A%252F%252Fwww.%20">http://www.microsemi.com.
The Microsemi Corporation logo is available at http://www.globenewswire.com/newsroom/prs/?pkgid=1233
"Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Any statements set forth in this news release that are not entirely historical and factual in nature, including without limitation statements concerning the Defense Supply Center Columbus (DSCC) having granted space-level qualification on the balance of Microsemi's first family of radiation-hardened power MOSFET devices, are forward-looking statements.. These forward-looking statements are based on our current expectations and are inherently subject to risks and uncertainties that could cause actual results to differ materially from those expressed in the forward-looking statements. The potential risks and uncertainties include, but are not limited to, such factors as rapidly changing technology and product obsolescence, potential cost increases, variations in customer order preferences, weakness or competitive pricing environment of the marketplace, uncertain demand for and acceptance of the company's products, adverse circumstances in any of our end markets, results of in-process or planned development or marketing and promotional campaigns, difficulties foreseeing future demand, potential non-realization of expected orders or non-realization of backlog, product returns, product liability, and other potential unexpected business and economic conditions or adverse changes in current or expected industry conditions, difficulties and costs of protecting patents and other proprietary rights, inventory obsolescence and difficulties regarding customer qualification of products. In addition to these factors and any other factors mentioned elsewhere in this news release, the reader should refer as well to the factors, uncertainties or risks identified in the company's most recent Form 10-K and all subsequent Form 10-Q reports filed by Microsemi with the SEC. Additional risk factors may be identified from time to time in Microsemi's future filings. The forward-looking statements included in this release speak only as of the date hereof, and Microsemi does not undertake any obligation to update these forward-looking statements to reflect subsequent events or circumstances.