Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module like performance in a compact discrete form factor.
Featuring over 12 mm pin-to-pin creepage and greater than 6000 V integrated isolation, the package is purpose built for 1200 V to 3300 V GeneSiC SiC MOSFETs, delivering module like performance in a compact discrete form factor.