II-VI and SEDI to Collaborate on GaN/SiC HEMT Devices for 5G Wireless

II-VI & SEDI Collaboration

II-VI’s leadership in 150 mm compound semiconductor manufacturing combined with SEDI’s leadership in GaN RF device technology will enable best-in-class performance, greater scale and competitive costs for 5G RF solutions.

Format

JPEG

Source

II-VI Incorporated

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