Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology

PR434 Option D (1)

The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification.

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JPEG

Quelle:

Navitas Semiconductor Corporation

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