Navitas Unveils Next-Generation Ultra-High-Voltage SiC Power Module to Advance Energy and Grid Infrastructure Efficiency

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Latest 2300 V, 8 mΩ full-bridge SiCPAK™ G power module leverages proprietary GeneSiC™ Trench-Assisted Planar™ technology to deliver the industry's leading RDSON, enabling higher and power density for solid-state transformers, grid-scale battery energy storage systems, solar inverters, and megawatt charging infrastructure

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JPEG

Quelle:

Navitas Semiconductor Corporation

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