ROHM's 650V EcoGaN™ Device Now Used in Innnergie's 45W USB-C Charger
ROHM's EcoGaN™ Adopted in the 45W Output USB-C Charger C4 Duo from Innergie, a Brand of Delta
February 26, 2024 19:00 ET | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Feb. 26, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its 650V GaN device (EcoGaN™) in the C4 Duo, a 45W output USB-C charger from...
ROHM's BM3G0xxMUV-LB power stage ICs feature built-in 650V GaN HEMTs and gate drivers
ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss
August 31, 2023 17:00 ET | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Aug. 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The...
ROHM's Ultra-High-Speed Control IC Maximizes the Performance of GaN Devices
ROHM Establishes Ultra-High-Speed Control IC Technology that Maximizes the Performance of GaN Devices
March 21, 2023 17:00 ET | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, March 21, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today introduced ultra-high-speed control IC technology that maximizes the performance of GaN and other...
GNE10xxTB Series GaN HEMTs
ROHM Starts Production of 150V GaN HEMTs: Featuring Breakthrough 8V Withstand Gate Voltage
March 22, 2022 17:00 ET | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, March 22, 2022 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced their new 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) which increase gate withstand voltage...