ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
February 15, 2024 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse...
Bare Die SiC from ROHM Chosen by Apex Microtechnology for Newest Line of Power Modules
March 20, 2023 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide...
ROHM’s SiC SBDs Chosen by Murata Power Solutions for Data Center PSUs
March 07, 2023 17:00 ET
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ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, March 07, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that Murata Power Solutions is using its high performance silicon carbide (SiC) Schottky...
Microchip Unveils Industry-Leading 3.3 kV Silicon Carbide (SiC) Power Devices Enabling New Levels of Efficiency and Reliability
March 21, 2022 08:09 ET
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Microchip Technology Incorporated
CHANDLER, Ariz., March 21, 2022 (GLOBE NEWSWIRE) -- System designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy...