ROHM's BM3G0xxMUV-LB power stage ICs feature built-in 650V GaN HEMTs and gate drivers
ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss
31 août 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, Aug. 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the BM3G0xxMUV-LB series of power stage ICs with built-in 650V GaN HEMTs and gate drivers. The...
GaN Innovation
300 W Adapter Reference Design from GaN Systems and ON Semiconductor Highlights GaN Innovation and Performance in Consumer Devices
19 déc. 2019 09h15 HE | GaN Systems
New solution is ideal for high efficiency, ultra-high-power density adapter applications for televisions, gaming notebooks and consoles, and industrial and medical devices. OTTAWA and PHOENIX, Dec....