ROHM Introduces Class-Leading Low ON Resistance N-Channel MOSFETs
ROHM’s New Class-Leading Low ON Resistance N-Channel MOSFETs: Delivering High Efficiency Operation in a Variety of Applications
31 mai 2023 17h00 HE | ROHM Semiconductor
Santa Clara, CA and Kyoto, Japan, May 31, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the RS6xxxxBx / RH6xxxxBx series of N-channel MOSFETs (40V/60V/80V/100V/150V; 13 part numbers)...
Transphorm to Present at the Q1 Virtual Investor Summit on March 25th at 2:00 pm ET
11 mars 2021 08h35 HE | Transphorm, Inc.
GOLETA, Calif., March 11, 2021 (GLOBE NEWSWIRE) -- via InvestorWire—Transphorm, Inc. (OTCQB: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power...
ROHM Offers Lineup of Automotive-Grade 1200V-Rated IGBT
09 mai 2019 11h00 HE | ROHM Semiconductor
Kyoto and Santa Clara, Calif., May 09, 2019 (GLOBE NEWSWIRE) -- ROHM recently announced the addition of four new automotive-grade 1200V-rated IGBTs which are ideal for inverters used in electronics...
ROHM Presents the Industry’s First AC/DC Converter ICs with a Built-In 1700V SiC MOSFET
08 mai 2019 11h00 HE | ROHM Semiconductor
Kyoto and Santa Clara, Calif., May 08, 2019 (GLOBE NEWSWIRE) -- ROHM today announced the availability of AC/DC converter ICs with a built-in 1700V SiC MOSFET, the BM2SCQ12xT-LBZ series. This series...
ROHM's New 650V IGBTs Deliver Class-Leading Efficiency with Soft Switching
07 juin 2018 12h17 HE | ROHM Semiconductor
Kyoto and Santa Clara, Calif., June 07, 2018 (GLOBE NEWSWIRE) -- ROHM today announced the availability of 2 new types of 650V IGBTs that combine class-leading low conduction loss with high-speed...
AAON, Inc. Fourth Quarter and Full Year 2011 Results Call
07 mars 2012 07h00 HE | AAON
TULSA, OK--(Marketwire - Mar 7, 2012) - AAON, Inc. (NASDAQ: AAON). A question and answer session will follow a brief presentation by our President Norman Asbjornson. The entire call should last...