ROHM’s New Schottky Barrier Diodes Achieve Class-Leading Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off Santa Clara, CA and Kyoto, Japan, Feb. 15, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new 100V breakdown Schottky Barrier Diodes (SBDs) that deliver industry-leading[1] reverse...

ROHM Expands Its Lineup of Compact, Market-Proven, High Efficiency Schottky Barrier Diodes for Automotive Applications Santa Clara, CA and Kyoto, Japan, Nov. 02, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced its expanded portfolio of Schottky barrier diodes (SBDs) with 24 new compact, high efficiency...

ROHM Introduces Hybrid IGBTs with Built-In SiC Diode Santa Clara, CA and Kyoto, Japan, July 19, 2021 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the RGWxx65C series of hybrid IGBTs with an integrated 650V SiC Schottky barrier diode. The...