Contact Information: Contacts: Layla McHale for Crocus Technology (408) 981-6394
Crocus Technology Enters STT Memory Race and Sets Industry Pace With New Prototype
'Write Current' Milestone Opens Door to Memory Densities Competitive With DRAM and NOR-Flash
| Source: Crocus Technology
SANTA CLARA, CA--(Marketwire - October 1, 2009) - GSA Expo -- Crocus Technology, a premier
developer of Magnetic Random Access Memory (MRAM), has announced the
development of a new Spin Transfer Torque (STT)-based MRAM technology that
will deliver on the promise of using STT memory in high-density memory
applications. This development is Crocus' first step toward creating an STT
solution that delivers memory density that is competitive with DRAM and
NOR-Flash. The new prototype, with minimum feature size of 50nm, allows
Crocus to target integration of its STT MRAM technology into leading-edge
semiconductor processes.
"The STT MRAM space has been struggling for years with key technical
limitations, but Crocus has made a big step forward to address these issues
and bring a viable STT solution to the market," said Jean Pierre Braun, CEO
and founder of Crocus Technology. "With this new development, Crocus is
leveraging its successful prior experience in an earlier generation of MRAM
to create a highly manufacturable STT technology suitable for use with the
latest deep-submicron processes."
The planned deployment of this STT innovation will allow Crocus to deliver
MRAM solutions that compete in several of the largest segments of the
memory chip market, including DRAM, NOR-Flash, and embedded SRAM. Typical
applications for high-density STT-based memory are expected to include
high-end mobile phones, netbook computers, rotating media and solid-state
disk drives, enterprise-class storage systems, network equipment,
high-reliability industrial and automotive uses, as well as other
applications where MRAM can solve the system problems associated with
'instant
power-on' and zero-risk recovery from power interruptions. Also anticipated
are applications where the use of MRAM will lower the cost of embedded
static RAM (SRAM), such as in microprocessor cache memory.
"Crocus' advanced STT memory may finally allow designers and engineers to
view MRAM as a serious alternative to DRAM, NOR Flash, or embedded SRAM,"
said Jim Turley, principal at Silicon Insider. "The company's technology
also makes a splendid replacement for embedded NOR-Flash that's scalable to
more advanced semiconductor processes. STT MRAM is about ten times denser
than embedded SRAM, so it's also a potential replacement for microprocessor
cache memory."
Crocus' development addresses two critical problems in the implementation
of STT MRAM that have previously hampered competitiveness with other
popular memory types: memory bit density and stability. Crocus has
developed a magnetic cell with an industry leading dynamic (i.e. sub-10
nanosecond) write current level of 2x10(6) amp/cm(2), e.g. less than 100µA
write current per bit, a major milestone which will remove a significant
obstacle to bit cell scaling and density. Crocus' STT technology also
provides for industry-leading data stability.
Crocus' STT technology leverages the company's expertise as used in its
previous successful development of TAS (Thermally Assisted Switching),
Crocus' first generation of MRAM technology. Crocus' TAS technology is
currently being transferred to Tower Semiconductor for full-scale
production implementation. Crocus' TAS MRAM products, manufactured with
130nm and 90nm processes, target standalone SRAM replacement and embedded
memory in microcontrollers, while STT is focused on higher density
applications such as embedded cache and NOR-Flash replacement in
System-on-Chip designs made with 65nm or smaller processes.
About Magnetic Random Access Memory
MRAM's unique characteristics make it particularly suitable to a wide
variety of telecommunication, networking, computing and handheld
applications currently using SRAM and/or flash memory technology. It is the
only scalable new memory technology providing non-volatility,
unlimited-write-endurance, high-density, and high-speed. It is
particularly well-suited to applications requiring high data reliability
and high performance, and has the unique potential of becoming the
universal embedded memory technology for systems-on-chip devices.
About Crocus Technology
Crocus is an early-stage developer of MRAM technology for dense,
non-volatile, high-speed, scalable memories. Its MRAM innovation was
conceived in the Grenoble-based Spintec laboratory, a world leading R&D
center in Spintronics affiliated with two famous French labs, CEA and CNRS.
Crocus' MRAM technology is covered by a comprehensive patent portfolio. The
Company licenses its technology for both stand alone and embedded chip
applications in a wide variety of telecommunication, networking, storage,
computing and handheld applications. Crocus is backed by VC firms AGF
Private Equity, CDC Innovation, Holding Entreprises et Patrimoine,
NanoDimension, Sofinnova Partners, Sofinnova Ventures, and Ventech and has
operations in Grenoble, France, and Sunnyvale, California.