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HUDSON, New Hampshire (EE. UU.) y HSINCHU, Taiwán, Aug. 07, 2019 (GLOBE NEWSWIRE) -- Las empresas GTAT Corporation (que opera como GT Advanced Technologies o GTAT) y GlobalWafers Co., Ltd....
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HUDSON, NH e HSINCHU, Taiwan, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) e GlobalWafers Co., Ltd. (GWC) hanno siglato un accordo a lungo termine...
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HUDSON, N.H. und HSINCHU, Taiwan, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) und GlobalWafers Co., Ltd. (GWC) haben eine langfristige Vereinbarung...
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HUDSON, N.H. en HSINCHU, Taiwan, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) en GlobalWafers Co., Ltd. (GWC) hebben een langetermijnovereenkomst...
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新罕布什爾州哈德森及台灣新竹, Aug. 08, 2019 (GLOBE NEWSWIRE) -- GT Advanced Technologies (GTAT) 旗下 GTAT Corporation 及 GlobalWafers Co., Ltd. (GWC) 已進入長期合作階段協議，兩家公司的專業知識將結合起來，形成新的碳化矽晶圓供應來源。GWC...
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HUDSON, N.H. and HSINCHU, Taiwan, Aug. 06, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT) and GlobalWafers Co., Ltd. (GWC) have entered into a long-term agreement...
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HUDSON, N.H., July 31, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, d/b/a GT Advanced Technologies (GTAT), presenta il suo materiale CrystX™ al carburo di silicio (SiC) da utilizzare in applicazioni...
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HUDSON, N.H., July 31, 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, handelsnaam GT Advanced Technologies (GTAT), introduceert het materiaal CrystX™ siliciumcarbide (SiC) voor toepassingen in...
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HUDSON, New Hampshire, July 31, 2019 (GLOBE NEWSWIRE) -- Die GTAT Corporation, die unter dem Handelsnamen Advanced Technologies (GTAT) agiert, stellt ihr Siliziumkarbid (SiC) CrystX™ für den Einsatz...
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HUDSON, New Hampshire, 31 juill. 2019 (GLOBE NEWSWIRE) -- GTAT Corporation, propriétaire de GT Advanced Technologies (GTAT), présente son matériau en carbure de silicium CrystX™ (SiC) destiné à être...