ASM Awarded Patents for PECVD Low-k Dielectric Technology

BILTHOVEN, The Netherlands (July 2, 2002) – ASM International N.V. (Nasdaq: ASMI and Euronext Amsterdam: ASM) today announced the grant of patents No. 6,352,945, 6,383,955 and 6,410,463 by the U.S. Patent & Trademark Office covering advanced low-k dielectric PECVD (plasma enhanced chemical vapor deposition) film deposition technology used in BEOL (Back-End-Of-Line) interconnect structures to increase the speed and performance of next-generation semiconductors. The patents call priority to its parent Japanese application filed February 5, 1998.
“These new patents cover unique low-k dielectric film deposition technology combined with precursors and deposition method, which differentiate ASM and other low-k suppliers,” said Tominori Yoshida, product manager of Low-k Modules Group. “These patents cover Aurora(tm) films and deposition technology using our Eagle series PECVD platforms and demonstrate our unique leadership in providing customers with most advanced technology to meet their next-generation chip manufacturing requirements.” Issued in March, May and June 2002, these patents center on ASM's Aurora films and deposition technology, a family of OSG (Organosilicate glass), also known as, CDO (Carbon-doped oxide) low-k dielectric products.
“Our Aurora low-k films offer low-cost film deposition solution on 200-mm and 300-mm wafers as these films are PECVD deposited on hot wafer and do not need anneal steps,” said Devendra Kumar, Director of BEOL Technology. “Aurora low-k films (k less than 3) are deposited from organic silicon precursors containing oxygen attached directly to silicon, and have superior thermal stability and mechanical strength. This enables chip manufacturers to cost-effectively integrate Aurora film with multi-level copper interconnect structures and packaging.”
Introduced in September 1998, Aurora technology has achieved growing global acceptance, with several chipmakers working with it in development and production lines. Aurora films with k less than 3, targeting 130 to 90 nanometer devices, is the industry's leading production-worthy low-k dielectric solution and has demonstrated the unique capability to be used in multi-level copper interconnect structures. Customers are expected to ship chips that integrate Aurora in 2002. Aurora films are extendable to k values of less than 2.4 using the same PECVD platforms, for use in 65 nanometer and lower technology nodes.

About ASM
ASM International N.V. is headquartered in Bilthoven, the Netherlands. ASM International is a global company, serving one of the most important and demanding industries in the world. The Company possesses a strong technological base, state-of-the-art manufacturing facilities, a competent and qualified workforce and a highly trained, strategically distributed support network. ASM International’s subsidiaries design and manufacture equipment and materials used to produce semiconductor devices. ASM International and its subsidiaries provide production solutions for wafer processing, assembly and packaging through their facilities in the United States, Europe, Japan and Asia. ASM International’s common stock shares trade on NASDAQ (symbol ASMI) and the Euronext Stock Exchange in Amsterdam (symbol ASM). For more information, visit ASM’s Web site at http://www.asm.com
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